类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 2.5V ~ 6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC08B/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
AS7C31025B-10TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
FT24C64A-ETG-TFremont Micro Devices |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
CY7C1525KV18-333BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V67803S166BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
11AA020-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
MT28EW128ABA1HJS-0SIT TRMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
CY7C1380KV33-200AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
GS81302DT37GE-450IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
CY27C256-55WCRochester Electronics |
UVPROM, 32KX8, 55NS |
|
GS81313LQ36GK-800IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
CY7S1061GE-10ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
S25FL127SABNFB100Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |