类型 | 描述 |
---|---|
系列: | HyperFlash™ KL |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 96 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-VBGA |
供应商设备包: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61C256AL-12JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
BU9833GUL-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C VCSP50L1 |
|
EDB8132B4PB-8D-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 168FBGA |
|
S-25C010A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 5MHZ 8TSSOP |
|
CY7C131-55JXIRochester Electronics |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
CY7C166-15VCTRochester Electronics |
STANDARD SRAM, 16KX4, 15NS, CMOS |
|
CY62148DV30L-55ZSXIRochester Electronics |
STANDARD SRAM, 512KX8 |
|
CAT28F020H-90Rochester Electronics |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
71T75802S150BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
M95040-RMN6TPSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8SO |
|
IS42RM32800E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
S26KL256SDABHA020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
93C46AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TDFN |