English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 3Mb (128K x 24) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S16320D-6CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V67703S85PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
24C00T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
70V27L15PFGIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
71V3578S133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
25LC256X-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8TSSOP |
|
EM6GE16EWXD-10IHEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
CY14B512PA-SFXIRochester Electronics |
IC NVSRAM 512KBIT SPI 16SOIC |
|
CAT28LV256G25Rochester Electronics |
IC EEPROM 256KBIT PAR 32PLCC |
|
25LC040AXT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8TSSOP |
|
AT28HC256F-90JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
M24256-BRMN6TPSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
GS8642Z36GB-250IVGSI Technology |
IC SRAM 72MBIT PARALLEL 119FPBGA |
