类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-LFBGA |
供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24L16FVJ-WE2ROHM Semiconductor |
IC EEPROM 16K I2C 400KHZ 8TSSOP |
|
W25Q40CLSSIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
93C56AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
CY7C1363A-133ACRochester Electronics |
STANDARD SRAM, 512KX18, 7NS |
|
71V124SA15PHRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY7C025-25AXCRochester Electronics |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
S27KL0641DABHI023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
IS43R16160F-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
11LC161T-E/TTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE SOT23 |
|
S25FL064LABMFI010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
W25Q80EWZPIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WSON |
|
93C56AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
IS42S16160J-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |