English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, F-RAM™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FRAM |
| 技术: | FRAM (Ferroelectric RAM) |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
LE25U40CMDTWGSanyo Semiconductor/ON Semiconductor |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
UPD44645094AF5-E40-FQ1-ARochester Electronics |
STANDARD SRAM, 8MX9, 0.45NS |
|
CAT93C46VRochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
S29CD016J0MFAM113Rochester Electronics |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
BR24G128FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8TSSOP |
|
BR24C08A-10TU-1.8ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |
|
IS43TR82560C-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
CY7C1387BV25-167ACRochester Electronics |
CACHE SRAM, 1MX18, 3.4NS |
|
IS61NLF51236B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
70T633S10BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
IS25LP080D-JNLA3ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
CY7C1393KV18-333BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
11LC020-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
