类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (256 x 8 x 4) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62147DV18LL-70BVIRochester Electronics |
STANDARD SRAM, 256KX16, 70NS |
|
AS4C16M32MD1-5BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
CY7C1041G30-10ZSXECypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT24C01C-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8UDFN |
|
25LC080DT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
S29GL064S90DHVV20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY62126DV30LL-70ZXIRochester Electronics |
STANDARD SRAM, 64KX16, 70NS |
|
AT25M01-SHM-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8SOIC |
|
MX25L1606EM1I-12GMacronix |
IC FLASH 16MBIT SPI 86MHZ 8SOP |
|
AT25DF081A-SSH-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8SOIC |
|
BR25H320FVM-2CTRROHM Semiconductor |
IC EEPROM 32KBIT SPI 10MHZ 8MSOP |
|
THGAMRG7T13BAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 128GBIT EMMC 153FBGA |
|
70T3519S133BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |