类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QUAD |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.4 ns |
电压 - 电源: | 1.71V ~ 1.89V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-LFBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STK14D88-NF25IRochester Electronics |
NON-VOLATILE SRAM, 32KX8, 25NS P |
|
S29GL064S80TFV010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
GD25LQ64CSIGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
93AA86AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
IS42S16400J-7B2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 60TFBGA |
|
CY7C1049BNL-17VCTRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
24LC65T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
S29GL512S11DHB023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
71V256SA15YRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71V67703S80BGRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
71V67703S75BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C199CNL-15VXCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71T75902S85BGG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |