类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.445", 11.30mm Width) |
供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC024HT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TDFN |
|
24AA02/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY62256LL-70ZXCRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY62147EV18LL-55BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
24C01-I/PRochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ |
|
CAV25010VE-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
MT29F2G08ABAGAWP-ITE:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AS4C8M32MSA-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90FBGA |
|
CY7C1069G30-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
DS1220AD-150+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
IS42S32800J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
S25FL256LAGBHV020Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
GD25Q64CSJGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |