English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62256LL-70ZXCRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY62147EV18LL-55BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
24C01-I/PRochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ |
|
CAV25010VE-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
MT29F2G08ABAGAWP-ITE:G TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AS4C8M32MSA-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90FBGA |
|
CY7C1069G30-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
DS1220AD-150+Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
IS42S32800J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
S25FL256LAGBHV020Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
GD25Q64CSJGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
|
SM662GEC BDS TTC29Silicon Motion |
FERRI EMMC 64GB 3D TLC + EXT. TE |
|
34VL02T/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
