English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-P |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC86C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
AM27S02A/BEARochester Electronics |
STANDARD SRAM, 16X4, 30NS |
|
AT24CSW010-UUM0B-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 4WLCSP |
|
IS43LD32320C-25BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
93C86CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
71256S45DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
AS4C2M32S-6BINAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
6116LA55DBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
CAT24C02ZI-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
AS7C34098A-20JINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY7C1346S-166AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
NDS76PT5-20ITInsignis Technology Corporation |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1325S-100AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
