English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT24C08HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8UDFN |
|
IS43TR16128AL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
W9812G6KH-6IWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 54TSOP II |
|
FM24C05UFLEM8Rochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
TMS27PC291-3FNLRochester Electronics |
OTP ROM, 2KX8, 35NS PQCC28 |
|
CY62148EV30LL-45BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36VFBGA |
|
IS43R16160D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
24FC16HT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
71024S20TYG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS25LQ040B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI/QUAD 8WSON |
|
AS7C34098B-10BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
CY14E256L-SZ25XCRochester Electronics |
IC NVSRAM 256KBIT PAR 32SOIC |
|
CY7C1470V33-167AXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
