类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93AA56A-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
AS7C316098B-10TINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PAR 54TSOP II |
|
CY7C1515JV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
W25Q64JWSSIM TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
DS1350ABP-70+Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
DS1245AB-120Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
IS46LR16320C-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1425KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
R1LV1616RBG-7SR#B0Rochester Electronics |
IC SRAM 16MBIT PARALLEL 48FBGA |
|
M93C46-RDW3TP/KSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
S29GL01GS10TFI010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AT28C256-15SU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
R1LP5256ESP-7SR#B0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |