类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62137CV30LL-70BVXERochester Electronics |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
CY7C1512KV18-200BZXIRochester Electronics |
QDR SRAM, 4MX18, 0.45NS |
|
IS43R86400F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY27H256-55JCRochester Electronics |
OTP ROM, 32KX8, 55NS PQCC32 |
|
70V9169L6PFGRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
7164S55DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
AT24C512BW-SH25-TRochester Electronics |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
S29GL512T12DHVV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
24LC024/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
CY62128EV30LL-45ZXATRochester Electronics |
STANDARD SRAM, 128KX8, 45NS PDSO |
|
MT46V128M4TG-6T:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
71V65703S85PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS7C31024B-10TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |