类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C199-45SCRochester Electronics |
32K X 8 STATIC RAM |
|
AS4C64M8D3-12BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 78FBGA |
|
DS1270Y-70IND#Maxim Integrated |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
GS880Z18CGT-333IGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
25LC160A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
SM671PXD ADS TU115Silicon Motion |
FERRI-UFS 128GB 3D TLC |
|
GS82564Z18GD-250IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
S34MS01G200GHI000Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 67BGA |
|
MR4A08BCYS35Everspin Technologies, Inc. |
IC RAM 16MBIT PARALLEL 44TSOP2 |
|
25AA256T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
93C46AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DFN |
|
CY7C1414KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS42SM32160E-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |