类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S27KL0642DPBHB020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
CY7C1041CV33-10BAJXERochester Electronics |
IC SRAM 4MBIT PARALLEL 48FBGA |
|
71V3559S75BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
DS1250YP-70+Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
93AA56AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
W972GG6KB-25 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |
|
IS42VM32800K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY7C1313CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MX29SL800CTTI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
25LC080C-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP |
|
MT41K64M16TW-107 AIT:JMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
IS25WP256D-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S40410161B1B2I010Rochester Electronics |
IC FLASH 16GBIT PARALLEL 100LBGA |