类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.5V ~ 3.6V |
工作温度: | -20°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM24C64C-LTAI-BAdesto Technologies |
IC CBRAM 64KBIT I2C 1MHZ 8TSSOP |
|
NM24C05LNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
CY7C1325B-100AIRochester Electronics |
CACHE SRAM, 256KX18, 8NS |
|
CY7C037V-15ACRochester Electronics |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
S71KS512SC0BHB000Cypress Semiconductor |
IC FLASH RAM 512MBIT PAR 24FBGA |
|
70T651S15BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY15E016Q-SXETCypress Semiconductor |
IC FRAM 16KBIT SPI 16MHZ 8SOIC |
|
IS43DR16128C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
71V124SA10PHGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY62256NLL-70SNXIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
FT24C256A-UDR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
CY7C09289V-12ACRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR24S128FV-WE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SSOPB |