CAP CER 270PF 63V C0G/NP0 1808
IC SRAM 36MBIT PARALLEL 100LQFP
CTG-KLEAN SYSTEM AU SERIES CARTR
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 36Mb (2M x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16320B-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54WBGA |
|
M25PX80-VMP6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN |
|
71V3557S75BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C0832BV-133AICypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 120TQFP |
|
AT93C66AW-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
IS42S16800D-7TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT29F64G08CFACBWP-12:CMicron Technology |
IC FLASH 64GBIT PAR 48TSOP I |
|
MT29F1T08EEHAFJ4-3TES:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
AT29C020-15TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT28F800B3WP-9 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
IDT71V016SA15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS42S32160A-75BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
AK6480CHAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 8KBIT SPI 5MHZ 8MSOP |