类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 32-DIP Module (0.600", 15.24mm) |
供应商设备包: | 32-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C17E-20PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28DIP |
|
IDT71V3556S133BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT27C010L-45TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT49F001-12JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT49BV512-90JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
AT49F002-90JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
709099L9PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT47H64M16HR-25E L:GMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AT28BV16-30PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
MT40A4G4NRE-083E:BMicron Technology |
IC DRAM 16GBIT PARALLEL 78FBGA |
|
BR25G256-3ROHM Semiconductor |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
MT45W4MW16BBB-706 L WT TRMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
IS42S16160D-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |