类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24C16-RDS6TGSTMicroelectronics |
IC EEPROM 16KBIT I2C 8MSOP |
|
S25FL164K0XNFA010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CY7C1460SV25-167BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AT45DB321C-CURoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI 40MHZ 24CBGA |
|
NMC27C16BQ200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 16KBIT PARALLEL 24DIP |
|
AT25DF161-MH-YRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 100MHZ 8UDFN |
|
IS42S32800B-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90LFBGA |
|
MT48LC16M16A2TG-75 L:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT41J128M8JP-15E IT:GMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
M24C01-RDS6TGSTMicroelectronics |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
AT28C64-25SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT71124S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS61LV10248-10T-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |