类型 | 描述 |
---|---|
系列: | StrataFlash™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 52 MHz |
写周期时间 - 字,页: | 85ns |
访问时间: | 85 ns |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-EasyBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C128M16D3A-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
NM24C02LM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8SOIC |
|
IS49NLS96400-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
AT24C64A-10TI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
AT27C1024-45VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
SST26VF032B-104I/SM70SVAORoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
|
MT40A256M16GE-075E:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
7007S55PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
7008L20J8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
W25Q16FWUUIQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
IS25WQ040-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 104MHZ 8SOP |
|
AT28C16-20TCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28TSOP |
|
MTFC4GMTEA-4M ITMicron Technology |
IC FLASH 32GBIT MMC 153WFBGA |