类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27BV020-15TIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
F128BFHTPTTL75ASocle Technology Corporation |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IDT71V124SA15TY8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C028V-15AXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT46V32M16P-75 L:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
TH58BVG3S0HTAI0Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 8GBIT 48TSOP I |
|
MT46H8M32LFB5-5:H TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
AT49BV002T-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT27C512R-55JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT28F640J3RG-115 GMET TRMicron Technology |
IC FLSH 64MBIT PARALLEL 56TSOP I |
|
IDT71V67602S150PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT40A1G8WE-083E:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
JS28F00AM29EWL0Micron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |