类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 120µs |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V, 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JS28F00AP33TFMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
70V9359L7PFI8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
IDT71V256SA12PZIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
M24C04-WMN6STMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8SO |
|
MT29F2G08AADWP-ET:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AT24C08B-TSU-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ SOT23-5 |
|
AT27LV512A-90TURoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
S30MS512R25TFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
IS61C6416AL-12TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT49BV1614AT-90TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AS4C2M32S-5TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
M29W400FB55N3F TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
W9812G6JH-5Winbond Electronics Corporation |
IC DRAM 128MBIT PAR 54TSOP II |