类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TFBGA |
供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25320-10PCRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8DIP |
|
AT24C01A-10SCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
24AA64T-E/MNYVAORoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TDFN |
|
IS61LPD102418A-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IS25CQ032-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI 104MHZ 8SOIC |
|
S25FL164K0XBHI023Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
W632GG6MB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
MT29E256G08CECBBH6-6:B TRMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
CY7C185-25PCCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28DIP |
|
IDT71V416L10YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
7130SA35TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
IDT6116LA20SORenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
AS4C32M32MD1-5BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 90FBGA |