English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V16M8P-6T:DTRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
MT53D384M32D2DS-053 XT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
IDT71V3559S85PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C16M32MS-6BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
AT28BV64B-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
AT28C256F-15JARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
R1RP0408DGE-2PR#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AT24C512B-TH25-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
AT49F001AN-45VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
DS2506SMaxim Integrated |
IC EPROM 64KBIT 1-WIRE 8SO |
|
LE25S80FDTWGSanyo Semiconductor/ON Semiconductor |
IC FLASH 8MBIT SPI 40MHZ 8VSOIC |
|
IDT71P71804S250BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS61NLF51236-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
