类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 16Gb (2G x 8) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-VBGA |
供应商设备包: | 100-VBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71T75602S200BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT25160B-MAPDGV-ERoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8UDFN |
|
CAT28C16AGI20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
M25PX80-VMP6TG0Y TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN |
|
N02L6181AB27ISanyo Semiconductor/ON Semiconductor |
IC SRAM 2MBIT PARALLEL 48BGA |
|
70V9279S9PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
U6264BS2C07LLG1Alliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
IS62WV25616DBLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT27C020-70JCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
MT41K1G8SN-107 IT:A TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
IS42S32200C1-55TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS61C1024AL-12KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IDT71V65603S150PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |