类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (2M x 32) |
内存接口: | Parallel |
时钟频率: | 183 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61C1024AL-12KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IDT71V65603S150PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71421SA55JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IDT71V25761SA200BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S70GL02GP12FFI022Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
IS61LPS204818A-166TQLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AS4C256M16D3A-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT29F1T08EMHAFJ4-3RES:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
IS43LD16640A-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
SST38VF6401B-70-5I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
CY7C027V-25AXICypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
CY62126ESL-45ZSXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IDT71124S12Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |