类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021CV33-12ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS26KL512S-DABLI00ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512MBIT PAR 24VFBGA |
|
IDT71016S12PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT41K256M8DA-125:MMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IDT71T016SA12PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
STK14C88-NF35ICypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
FT93C56A-ISR-BFremont Micro Devices |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
CY7C1041BNL-20VXCTCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
MT41K512M8DA-093 IT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
S29GL512P10TFCR20DCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT29F1HT08EMCBBJ4-37:B TRMicron Technology |
IC FLASH 1.5T PARALLEL 132VBGA |
|
IS63LV1024L-12H-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
STK11C68-5K45MCypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28CDIP |