English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字，页: | 150µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT93C46-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AT27LV512A-90TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IS61NLP102418-200B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S29GL064N90TFA040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY62256LL-55SNXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
IS49NLC96400-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
70V5388S200BGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 272PBGA |
|
MT46V16M16CY-6:K TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
AT24C32W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
MT48H8M32LFB5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70V35S15PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
AT49F002N-12JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
CAT25160VI-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
