类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 8Gb (1G x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 13.75 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x13.2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M28W640FCT70N6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
DS1225Y-150IND+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
AT28C256E-15TIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
MT47H16M16BG-5E:BMicron Technology |
IC DRAM 256MBIT PARALLEL 84FBGA |
|
FT93C56A-UDR-BFremont Micro Devices |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
AT25256W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 3MHZ 8SOIC |
|
70V9099L9PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT29F8G08ABABAWP-ITX:BMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
AT27C256R-45TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
N01L63W3AT25ITSanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT29F128G08CECABH1-12Z:AMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |
|
IS25LP064-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
MT47H128M8CF-3 AIT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |