English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49BV002N-90JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
70V25L55PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
70V25S25JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
S34MS04G100BHB000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
IS61LPS25672A-250B1ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
IS42S83200D-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS49NLC18160-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
CAT24C512ZI-T3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8MSOP |
|
70V25L55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
CY62256VNLL-70ZXETCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
SST39VF512-70-4C-WHERoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
JS28F320J3F75EMicron Technology |
IC FLASH 32MBIT PARALLEL 56TSOP |
|
AT49LV001NT-90TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
