English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V9269S12PRF8/703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
SST39WF800A-90-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
M29W400DB70ZE6EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
MT28F800B3WG-9 T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
MT48LC4M32B2F5-7 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS42S16800E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
S99GL01GP11TFIR20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS49NLS18320-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
70V08S20PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7025L45JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
AT34C02-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
STK12C68-C35ICypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28CDIP |
|
CY62256LL-70SNXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOIC |
