类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 1.066 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V416YL15Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V546XS133PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7024L20PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
7025S25J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
25LC160DT-E/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8TSSOP |
|
IS49NLC36800-25BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
AT45DB041D-MU-SL383Adesto Technologies |
IC FLASH 4MBIT SPI 66MHZ 8VDFN |
|
CAT28F512L12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 512KBIT PARALLEL 32DIP |
|
MT29F4G16AACWC-ET:C TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
IDT70V7339S133DDIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 144TQFP |
|
AT49SV322D-80TURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
7014S12PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 64TQFP |
|
71342SA35J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |