类型 | 描述 |
---|---|
系列: | MoBL® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (2M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (8x9.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29C010A-70JURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
PCF8598C-2T/02,118NXP Semiconductors |
IC EEPROM 8KBIT I2C 100KHZ 8SO |
|
25AA080CT-E/MNY16KVAORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
MT29RZ1CVCZZHGTN-18 W.85HMicron Technology |
IC FLASH RAM 1GBIT PAR 121VFBGA |
|
JS28F256P33T2EMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M25P16-VMF6TP TRMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 16SO W |
|
AT28BV256-20SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
W25Q64FVZPJQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
N25Q032A11ESE40F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8SO |
|
IDT71V424S10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT40A256M16GE-083E AUT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT28F400B5WG-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
70V35S25PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |