English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 512Kb (32K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49BV322A-70TURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
EDB2432BCPE-8D-F-DMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
W25Q32JVZEJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
AT24C01A-10SI-2.7CRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
FM93C66ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
GD25VE20CTIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
IDT71V416YS15YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S29GL128N11FFVR22Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT26DF161A-MURoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 70MHZ 8VDFN |
|
AT29C512-15TCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
70V26L55JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT24C01-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
AT28HC64BF-90PURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
