English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 120 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS25LQ080-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
IDT71V256SA15YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT41K512M8RH-125 M:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT48LC64M4A2P-7E:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT25320T1-10TIRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 14TSSOP |
|
IS61NLP25636A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
DS1270AB-70Maxim Integrated |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
MT29F64G08CBCGBWP-10ES:G TRMicron Technology |
IC FLASH 64GBIT PAR 48TSOP I |
|
M29DW641F70N6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
AT24C128N-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
MT46V64M8BN-6 L:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71V2576S150PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V3558S100BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
