类型 | 描述 |
---|---|
系列: | Axcell™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | 105ns |
访问时间: | 105 ns |
电压 - 电源: | 2.3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1313CV18-250BZICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT40A256M16GE-075E:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT29F32G08ABAAAWP-ITZ:AMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
MT29F64G08CBEFBWP-M:FMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
AT24C512BN-SH25-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
MT29F256G08CEECBH6-12:CMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
AT25320AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8SOIC |
|
CY7C1069AV33-12ZXCCypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
IS61DDB21M36C-300M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT41K512M16HA-125 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
PZ28F064M29EWTAMicron Technology |
IC FLASH 64MBIT PARALLEL 48BGA |
|
N25Q128A13ESEC0F TRMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
709279L9PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |