类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 9 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C17E-20SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28SOIC |
|
7008S55PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
N25Q064A13ESF41F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 16SO W |
|
IDT71V35761S166PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M25P40-VMP6GMicron Technology |
IC FLASH 4MBIT SPI 50MHZ 8VDFPN |
|
MT47H64M16B7-5E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
CY14B256K-SP45XCTCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
7164L20TPGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28DIP |
|
IDT71V67903S80PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61LPS51236A-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V65803S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
TE28F256P33BFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
MT47H32M16CC-5E IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |