类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61LPS51236A-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V65803S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
TE28F256P33BFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
MT47H32M16CC-5E IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
DS1249Y-85INDMaxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
R1EX24032ASAS0I#S0Renesas Electronics America |
IC EEPROM 32KBIT I2C 400KHZ 8SOP |
|
CAT25256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
CY7C1462SV25-200AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
SST39WF1601-70-4C-MBQE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
AS4C8M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
AT29C512-70TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
AT45DB041B-TI-2.5Roving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 15MHZ 28TSOP |
|
IS49NLS18160-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |