English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PC28F512G18FEMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
IS43TR16128C-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AT28C64E-15SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
AT25160N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
AT27C1024-55VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
CAT28F010GI12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT48LC32M8A2TG-6A:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT93C46-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
IS46TR16640BL-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IDT70T631S12DDRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 144TQFP |
|
MT44K16M36RB-125E:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT28HC256E-90PURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IS42S32200C1-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
