类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 1Mb (32K x 32) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.63V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F800DB55N1Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
AT24C02-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
70V05S35PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
M25PE80-VMS6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VDFPN |
|
AT29C512-15PCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
IS43TR16640B-15GBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IDT71V416VS12BE8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
W25X10VSNIG T&RWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 75MHZ 8SOIC |
|
7140LA35PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT29F4G08ABADAWP-AT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
M45PE10-VMP6GMicron Technology |
IC FLASH 1MBIT SPI 75MHZ 8VDFPN |
|
AS4C4M32S-6TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
MX29LV800CBMC-90GMacronix |
IC FLASH 8MBIT PARALLEL 44SOP |