类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 16Mb (2M x 8, 1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H64M16LFBF-6 IT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
25LC080CT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
IDT71V67803S166PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140LA25JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS41LV16105B-60KLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
S25FL116K0XBHV020Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 24BGA |
|
W632GG8MB11JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
W25Q128FVEIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT71V416VS15BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
IDT71V432S5PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT46V64M8TG-5B IT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT71V256SA20PZRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
IS43DR16128A-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |