English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 64Gb (8G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 153-WFBGA |
| 供应商设备包: | 153-WFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32200L-6B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
MT29F8G08ABACAH4-S:CMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
AT27BV512-90JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
IDT71V65602S100PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT47H16M16BG-37V:BMicron Technology |
IC DRAM 256MBIT PARALLEL 84FBGA |
|
MT48H16M32LFB5-75 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
AT25128T2-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |
|
W25Q16BVSFIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
MT29F64G08CBABAWP-M:BMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
AT24C08C-MAPD-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
IS42S32800D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
M27C512-90B1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28DIP |
|
IDT71124S12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
