类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M27C512-90B1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28DIP |
|
IDT71124S12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
M29W400DB55N1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT49F001N-55VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
MT41K2G4SN-125:AMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
CY7C1418KV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT47H128M4CB-37E:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT29C256-12JI-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
IDT71V25761YSA166BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MTFC2GMVEA-L1 WTMicron Technology |
IC FLASH 16GBIT MMC 153WFBGA |
|
CY7C1021CV33-15VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
RMLV1616AGSD-5S2#AC0Renesas Electronics America |
IC SRAM 16MBIT PAR 52TSOP II |
|
CY7C1418BV18-267BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |