English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | RAM |
| 技术: | SARAM |
| 内存大小: | 64Kb (4K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 80-LQFP |
| 供应商设备包: | 80-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29CD032J0RFAM033Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
CY7C1021CV33-10ZXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
DS2070W-100#Maxim Integrated |
IC NVSRAM 16MBIT PARALLEL 256BGA |
|
IS43TR16128D-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V25761YSA200BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT53B128M32D1DS-062 AUT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
IS61NLP25618A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT46V32M16BN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71V416VS10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V424S12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43QR16256A-093PBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
PC28F640P33B85B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT46V128M4FN-75:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
