类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 576Mb (16M x 36) |
内存接口: | Parallel |
时钟频率: | 1.066 GHz |
写周期时间 - 字,页: | - |
访问时间: | 10 ns |
电压 - 电源: | 1.28V ~ 1.42V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 168-TBGA |
供应商设备包: | 168-BGA (13.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC4M32B2B5-6A AIT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS25LQ032B-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
W29GL256SH9TWinbond Electronics Corporation |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS42S32800B-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71P74604S167BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
AT24C1024C1-10CI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8LAP |
|
IS61NLF12836A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7130LA35TFGRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT29F256G08CMCABH2-10RZ:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
MT53B512M32D2DS-062 AIT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
23K640-E/SNVAORoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
AT27LV256A-15JCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT49F001NT-70PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |