类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS41LV16100B-60TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
70V24S55PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
70V25S15PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IDT71T75902S75PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT25160-10PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
AT93C66-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
W25Q64CVTBIP TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
S34ML01G204TFI013SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
MT48LC16M16A2P-7E AIT:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71V35761S200BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
23LCV512-E/PRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DUAL 8DIP |
|
IS25LQ016B-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
MT53B1DBDS-DC TRMicron Technology |
IC DRAM SPEC/CUSTOM 200WFBGA |