English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 200µs |
| 访问时间: | 150 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 24-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C128M16D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT27C080-15RIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
IS61VF102418A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V3558SA200BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V3558SA100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS39LV010-70JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IDT71V416YS15Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S25FL129P0XBHV300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
MT29F8G08ABABAWP-AATX:B TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
709379L9PF8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IS42RM16160E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
M27C256B-10B6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
MT29F384G08EBCBBJ4-37:B TRMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
