类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3558SA100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS39LV010-70JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IDT71V416YS15Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S25FL129P0XBHV300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
MT29F8G08ABABAWP-AATX:B TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
709379L9PF8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IS42RM16160E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
M27C256B-10B6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
MT29F384G08EBCBBJ4-37:B TRMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
|
JS28F256M29EWHDMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
CY7C1329S-166AXCCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
AT49BV040-12JIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
CY7C025-25JXICypress Semiconductor |
IC SRAM 128KBIT PARALLEL 84PLCC |