English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V416L10BEI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
AT24C512C1-10CI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8LAP |
|
IDT71V3577SA80BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT45D041A-RIRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 15MHZ 28SOIC |
|
7026S15JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT28C040-20LIRoving Networks / Microchip Technology |
IC EEPROM 4MBIT PARALLEL 44CLCC |
|
AS4C16M16D1-5TINAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
MT48H8M16LFB4-8 IT TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
W25Q64FWZPIF TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT28F008B5VG-8 T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
7024S15PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
93C86B-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
IDT71V424YL10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
