类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 125 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 7 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-VFBGA |
供应商设备包: | 54-VFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64FWZPIF TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT28F008B5VG-8 T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
7024S15PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
93C86B-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
IDT71V424YL10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49BV163D-70TU-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IDT71V416YS12Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
MT46V16M16P-6T IT:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AS4C64M16MD1-5BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AS4C128M8D3A-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
RMWV6416AGSA-5S2#KA0Renesas Electronics America |
IC SRAM 64MBIT PARALLEL 48TSOP I |
|
7009L20PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT47H64M16HR-3:E TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |